叶建东

微电子与光电子学系 博导

个人简历

2002年和2006年分别获云顶娱乐官网理学学士和工学博士学位。2006年-2010年在新加坡科技发展局(A*STAR)微电子研究院工作,任职Senior Research Engineer;2010年-2011年在澳大利亚国立大学任职Queen Elizabeth II Fellow。2011年至今为云顶娱乐官网教授、博导。在国外工作期间曾主持和完成新加坡科技发展局重大科技项目、创新探索项目及澳大利亚研究基金会人才创新项目。2013年获得国家优秀青年基金和江苏省杰出青年基金资助,2014年获得江苏省第十一批“六大高峰人才”培养计划A类资助。近年主要从事氧化物半导体光电子材料与信息功能器件的研究。主持和完成国家重点研发计划课题、国家自然科学基金、江苏省重点研发计划项目等5项,省部级项目3项。在ACS Nano、ACS Photonics、Adv. Opt. Mater、 ACS AMI、Nano Lett. Phys. Rev. B, Appl. Phys. Lett.、IEEE EDL、TED和IEEE PTL等学科顶级期刊论文48篇,他引2100余次。多次在美国材料学会会议 (MRS)等重要国际学术会议上作邀请报告。

研究方向

1、宽带隙氧化物半导体材料外延;

2、氧化物异质界面物理研究与光电信息功能器件应用;

3、超宽禁带氧化物功率器件研究。

主要课程

大学物理II,理论物理,微电子与光电子前沿讲座,半导体物理与器件,固体电子器件进展(全英文)

代表成果
  • Ye JD, Lim ST, Bosman M, Gu SL, Zheng YD, Tan HH, Jagadish C, Sun XW, Teo KL. Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures. Scientific Reports 2, 533 (2012)

  • Ye JD, Parkinson P, Ren FF, Gu SL, Tan HH, Jagadish C. Raman probing of competitive laser heating and recrystallization effects in ZnO nanocrystals. Optics Express 20, 23281 (2012)

  • Ren FF, Ang KW, Ye JD, Yu MB, Lo GQ, Kwong DL. Split Bulls Eye Shaped Aluminum Antenna for Plasmon-Enhanced Nanometer Scale Germanium Photodetector. Nano Letters 11, 1289 (2011)

  • Ye JD, Pannirselvam S, Lim ST, Bi JF, Sun XW, Lo GQ, Teo KL, Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy. Applied Physics Letters 97, 111908 (2010)

  • Ye JD, Tan ST, Pannirselvam S, Choy SF, Sun XW, Lo GQ, and Teo KL. Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics. Applied Physics Letters 95, 101905 (2009)

  • Ye JD, Tripathy S, Ren FF, Sun XW, Lo GQ, and Teo KL. Raman-active Frohlich phonon modes in arsenic-implanted ZnO. Applied Physics Letters 94, 011913 (2009)

  • Ye JD, Zhao H, Liu W, Lo GQ, Sun XW, Kwong DL, Zhang R, Shi Y, Zheng YD. Theoretical and Experimental Depth-resolved Cathodoluminescence Microanalysis of Excitonic Emission from ZnO Epilayer. Applied Physics Letters 92, 131914 (2008)

  • Ye JD, Sun XW, Lo GQ, Kwong DL, Zhang R, Shi Y, Zheng YD. Effect of alloying and localized electronic states in Zn1-xMgxO (x<0.15) nanocrystals probed by resonant Raman scattering. Applied Physics Letters 91, 091901 (2007)

  • Lloyd-Hughes J*, Failla M, Ye JD*, Jones SPP, Teo KL, Jagadish C, Interfacial and bulk polaron masses in Zn1-xMgxO/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy. Appl. Phys. Lett. 106, 202103 (2015)   

  • Y. Xu, X.H. Chen, D. Zhou, F. F. Ren, J. J. Zhou, S. Bai, H. Lu, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye, Carrier Transport and Gain Mechanisms in beta Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors, IEEE Transactions on Electron Devices 66, 2276 (2019)      

  • X. H. Chen, F. F. Ren, S. L. Gu, J. D. Ye, Review of gallium-oxide-based solar-blind ultraviolet photodetectors, Photonics Research 7, 381 (2019)

  • Y. F. Zhang, F. F. Qin, J. Zhu, X. H. Chen, J. Li, D. M. Tang, Y. Yang, F. F. Ren, C. X. Xu, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye, Low-threshold ultraviolet stimulated emissions from large-sized single crystalline ZnO transferable membranes. Opt. Express 26, 31965 (2018)

  • J. Li, X. H. Chen, T. C. Ma, X. Y. Cui, F. F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, S. P. Ringer, L. Fu, H. H. Tan, C. Jagadish, J. D. Ye. Identification and modulation of electronic band structures of single-phase beta-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy. Appl. Phys. Lett. 113, 041901 (2018)

  • K. Y. Nie, X. C. Tu, J. Li, X. H. Chen, F. F. Ren, G. G. Zhang, L. Kang, S. L. Gu, R. Zhang, P. H. Wu, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye. Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array. ACS Nano 12, 7327 (2018)

  • X. H. Chen, Y. Xu, D. Zhou, S. Yang, F. F. Ren, H. Lu, K. Tang, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye, Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase alpha-Ga2O3/ZnO Isotype Heterostructures. ACS Appl. Mater. Interfaces. 9, 36997 (2017)   



联系方式
电话::025-89686823
邮件::yejd@nju.edu.cn
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  • 新信息门户
  • 云顶娱乐官网资讯
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友情链接

  • 云顶娱乐官网
  • 新信息门户
  • 云顶娱乐官网资讯
  • 云顶娱乐官网国际教育
  • 云顶娱乐官网校园地图
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