纪小丽

信息电子学系 博导

个人简历

1994年赴日本筑波大学留学,1998年3月获筑波大学工学博士学位。先后在中国科学技术大学,日本筑波大学、京都大学、日本Victor企业(JVC)等机构从事半导体材料和器件应用方面研究工作。现为云顶娱乐官网教授、博士生导师。任职期间主持科研项目多项,并参加973和国家重大科学研究计划等课题研究。在Physical Review B, IEEE ACCESS, IEEE TED, Optical Express, Applied physics letter, 等学术期刊上发表论文50余篇,专利20多项。欢迎本科生,硕士和博士研究生加入本科研团队。

最新代表作:
1)QIXUAN YANG, XIAOLI JI*, YUE XU, AND FENG YAN,“Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance”
IEEE ACCESS, Vol. 7 (2019)

2)JINLAN LI, ZHICHENG XU,PING HAN,JIANXIN CHEN,AND XIAOLI JI*, “Investigation of deep level defects on Beryllium compensation doping of In0.53Ga0.47As/GaAs0.49Sb0.51 type-II superlattice photodiodes“ OPTICS EXPRESS Vol. 26, No.12 (2018)

研究方向

1) CMOS传感器及其在太赫兹方向应用; 2)纳米小尺寸CMOS器件工艺及可靠性;3)红外测器工艺和器件物理

主要课程

1)集成电路可靠性和失效分析(本科生);
2)模拟集成电路设计(本科生);
3)集成电路工艺、器件及表征(研究生)
4)信息电子学前沿实验 (本科生);

代表成果
  • Shengfen Chiu, Yue Xu, Xiaoli Ji*, et al“An advanced tunnel oxide layer process for 65nm NOR floating-gate flash memories” Semicond.Sci.Technol. 30 (2015) 105032.

  • Ying Zhou, Xiaoli Ji*, et al. Impact of SiNx passivation on the surface properties of InGaAs photo-detectors; Journal of Applied Physics 118,034507 (2015).

  • Xiaoli Ji, Chunbo Wu, Yue Xu,Feng Yan;The promising multi-bit/level programming operations for nano-scaled SONOS memory; Microelectronics Reliability 54,119 (2014).

  • Xiaoli Ji , Baiqing Liu, Hengjing Tang, Xuelin Yang, Xue Li, HaiMei Gong, Bo Shen, Ping Han and Feng Yan. 2.6 m MBE grown InGaAs detectors with dark current of SRH and TAT; AIP Advance 4,087135 (2014)

  • Jianguan Chang, Xiaoli Ji*, et al.; Impact of various silicide techniques on SiGe source–drain series resistance and mobility of pMOSFETs; Semicond. Sci. Technol. 28 ,115009 (2013)

  • Xiaoli Ji, Yimin Liao, Chenxin Zhu, Jianguang Chang, Feng Yan, Yi Shi;The energy distribution of NBTI-induced hole traps in the Si band gap in PNO pMOSFETsIEEE International Reliability Physics Symposium 1(2013).

  • Xiaoli Ji, Baiqing Liu, Yue Xu, Hengjing Tang, Xue Li, HaiMei Gong, Bo Shen, Xuelin Yang, Ping Han, and Feng Yan;Deep-level traps induced dark currents in extended wavelength InxGa1xAs/InP
    photodetector Journal of Applied Physics 114, 224502 (2013).

  • Xiang Li,Chenxin Zhu,Xi Zhu,Zhihuang Xu,Xinxin Zhuang,Xiaoli Jiand Feng Yan; Background limited ultraviolet photodetectors of solar-blind ultraviolet detection;APPLIED PHYSICS LETTERS 103, 171110 (2013).

  • Xiaoli Ji, Yiming Liao, Feng Yan, Chenxin Zhu, Yi Shi,Physical understanding of negative bias temperature instability below room temperature Journal of Applied Physics 112,104514 (2012).

  • Xiaoli Ji, Yimin Liao,Feng Yan ,Yi Shi,Guang Zhang and Qiang Guo ;The physical mechanisms of IG Random Telegraph Noise in deeply scaled pMOSFETs IEEE International Reliability Physics Symposium 5(2012).


联系方式
电话::025-89683965
邮件::xji@nju.edu.cn
信箱: :
办公地址::仙林校区云顶娱乐潘忠来楼232B

友情链接

  • 云顶娱乐官网
  • 新信息门户
  • 云顶娱乐官网资讯
  • 云顶娱乐官网国际教育
  • 云顶娱乐官网校园地图

友情链接

  • 云顶娱乐官网
  • 新信息门户
  • 云顶娱乐官网资讯
  • 云顶娱乐官网国际教育
  • 云顶娱乐官网校园地图
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